Publications

An in-depth understanding of microelectronics assurance in Department of Defense (DoD) missions is increasingly important as the DoD continues to address supply chain challenges. Many studies take a "bottom-up" approach, in which vulnerabilities are assessed in terms of general-purpose usage. This is beneficial in developing a general knowledge foundation. However...

A novel sensor is being developed for a new uncooled imager technology that is scalable to large formats (tens of megapixels), which is greater than what is achieved by commercial microbolometer arrays. In this novel sensor, a liquid-crystal transducer is used to change a long-wavelength infrared scene into a visible...

A double patterning process is presented to pattern sub-35 nm wide channels in hydrogen silsesquioxane with near 100% pattern densities. Using aligned electron beam lithography, each side of the nanochannel structure is patterned as a separate layer. A 50000 uC/cm^2 high-dose anneal is applied to the first layer after exposure...

The authors report on the development of surfaces containing artificially fabricated structures of dual nanometer and micrometer surfaces that allow an aqueous droplet to be reversibly switched by electrowetting from a Cassie state with low adhesion to a Wenzel state with high adhesion. A variety of geometries were fabricated to...

Solar cells embedded in the SOI substrate were successfully used as the sole energy source to power a ring oscillator fabricated using an ultra-low-power fully depleted SOI process on the same wafer. The speed of the ring oscillator increased with increasing light intensity and showed a fastest oscillation with a...

In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O2 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-um resolution. The photoluminescence (PL) map shows less than...

This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics...

Orthodox etching of HVPE-grown GaN in molten eutectic of KOH+NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using...

Leaching of resist components into water has been reported in several studies. Even low dissolution levels of photoacid generator (PAG) may lead to photocontamination of the last optical surface of the projection lens. To determine the impact of this phenomenon on optics lifetime, we initiate a set of controlled studies...

The authors have developed an atomic-force-microscopy-based technique to measure intrinsic material roughness after base development. This method involves performing an interrupted development of the resist film and measuring the resulting film roughness after a certain fixed film loss. Employing this technique, the authors previously established that the photoacid generator (PAG)...