Publications

In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O2 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-um resolution. The photoluminescence (PL) map shows less than 1 nm change in average peak wavelength, and even improved peak intensity (4% better) and full width at half maximum (41% better) after 150 mm in diameter epitaxial transfer. Small and uniformly distributed residual strain in all sizes of bonding, which is measured by high-resolution X-ray diffraction Omega- 2Theta mapping, and employment of a two-period InP-InGaAsP superlattice at the bonding interface contributes to the improvement of PL response. Preservation of multiple quantum-well integrity is also verified by high-resolution transmission electron microscopy.

We demonstrate the transfer of the largest (150 mm in diameter) available InP-based epitaxial structure to the silicon-on-insulator substrate through a direct wafer-bonding process. Over 95% bonding yield and a void-free bonding interface was obtained. A multiple quantum-well diode laser structure is well-preserved after bonding, as indicated by the high-resolution X-ray diffraction measurement and photoluminescence (PL) map. A bowing of 64.12 um is measured, resulting in a low bonding-induced strain of 17 MPa. PL measurement shows a standard deviation of 1.09% across the entire bonded area with less than 1.1 nm wavelength shift from the as-grown wafer.