Publications

A lack of inversion symmetry coupled with the presence of time-reversal symmetry endows 2D transition metal dichalcogenides with individually addressable valleys in momentum space at the K and K' points in the first Brillouin zone. This valley addressability opens up the possibility of using the momentum state of electrons, holes...

The H-terminated surface of diamond when activated with NO2 produces a surface conduction layer that has been used to make FETs. Variations in processing can significantly affect this conduction layer. This article discusses the effect of diamond surface preparation and H termination procedures on surface conduction. Surface preparations that generate...

Two scanning electron beam lithography (SEBL) patterning processes have been developed, one positive and one negative tone. The processes feature nanometer-scale resolution, chemical amplification for faster throughput, long film life under vacuum, and sufficient etch resistance to enable patterning of a variety of materials with a metal-free (CMOS/MEMS compatible) tool...

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was...

The minimum energy point of an integrated circuit (IC) is defined as the value of the supply voltage at which the energy per operation of the circuit is minimized. Several factors influence what the value of this voltage can be, including the topology of the circuit itself, the input activity...

Fully depleted silicon-on-insulator transistors coated with gadolinium oxide are shown to be effective thermal neutron dosimeters. The theoretical neutron detection efficiency is calculated to be higher for Gd2O3 than for other practical converter materials. Proof-of-concept dosimeter devices were fabricated and tested during thermal neutron irradiation. The transistor current changes linearly...

Etching of indium tin oxide (ITO) thin films in high density chlorine plasmas is studied, with the goal of increasing the etching selectivity to photoresist. The ITO etching rate increases with ethylene addition, but is not affected by BCl3 addition. ITO exhibits a threshold energy for ion etching, whereas the...

Solar cells embedded in the SOI substrate were successfully used as the sole energy source to power a ring oscillator fabricated using an ultra-low-power fully depleted SOI process on the same wafer. The speed of the ring oscillator increased with increasing light intensity and showed a fastest oscillation with a...

Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation...

The effective work function of a reactively sputtered TiN metal gate is shown to be tunable from 4.30 to 4.65 eV. The effective work function decreases with nitrogen flow during reactive sputter deposition. Nitrogen annealing increases the effective work function and reduces Dit. Thinner TiN improves the variation in effective...