Publications

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.

This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods. The graphene devices presented feature high-k dielectric, mobilities up to 5000 cm2/V · s, and Ion/Ioff ratios of up to seven, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micrometer-scale devices have negligible band gaps and, therefore, large leakage currents.