Publications
Arrays of InP-based avalanche photodiodes for photon counting
July 1, 2007
Journal Article
Published in:
IEEE J. Sel. Top. Quantum Electron., Vol. 13, No. 4, July/August 2007, pp. 870-886.
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R&D area:
Summary
Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 um wavelength show dark count rates (DCRs)
Summary
Arrays of InP-based avalanche photodiodes (APDs) with InGaAsP absorber regions have been fabricated and characterized in the Geiger mode for photon-counting applications. Measurements of APDs with InGaAsP absorbers optimized for 1.06 um wavelength show dark count rates (DCRs)
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Afterpulsing in Geiger-mode avalanche photodiodes for 1.06um wavelength
March 27, 2006
Journal Article
Published in:
Appl. Phys. Lett., Vol. 88, No. 13, 27 March 2006, pp. 133503-1 - 133503-3.
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Summary
We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to investigate possible sources of afterpulsing in these devices. For 30-um-diam, 1.06-um-wavelength InGaAsP/InP APDs operated at 290 K and 4 V overbias, we obtained a dominant trap lifetime of td=0.32 us, a trap energy of 0.11 eV, and a baseline dark count rate 245 kHz.
Summary
We consider the phenomenon of afterpulsing in avalanche photodiodes (APDs) operating in gated and free-running Geiger mode. An operational model of afterpulsing and other noise characteristics of APDs predicts the noise behavior observed in the free-running mode. We also use gated-mode data to investigate possible sources of afterpulsing in these...
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