Publications

Refine Results

(Filters Applied) Clear All

Effect of surface roughness and H-termination chemistry on diamond's semiconducting surface conductance

Summary

The H-terminated surface of diamond when activated with NO2 produces a surface conduction layer that has been used to make FETs. Variations in processing can significantly affect this conduction layer. This article discusses the effect of diamond surface preparation and H termination procedures on surface conduction. Surface preparations that generate a rough surface result in a more conductive surface with the conductivity increasing with surface roughness. We hypothesize that the increase in conductance with roughness is the result of an increase of reactive sites that generate the carriers. Roughening the diamond surface is just one way to generate these sites and the rough surface is believed to be a separate property from the density of surface reactive sites. The presence of C in the H2 plasma used for H termination decreases surface conductance. A simple procedure for NO2 activation is demonstrated. Interpretation of electrical measurements and possible alternatives to activation with NO2 are discussed. Using Kasu's oxidation model for surface conductance as a guide, compounds other than NO2 have been found to activate the diamond surface as well.
READ LESS

Summary

The H-terminated surface of diamond when activated with NO2 produces a surface conduction layer that has been used to make FETs. Variations in processing can significantly affect this conduction layer. This article discusses the effect of diamond surface preparation and H termination procedures on surface conduction. Surface preparations that generate...

READ MORE

High-resolution, high-throughput, CMOS-compatible electron beam patterning

Published in:
SPIE Advanced Lithography, 26 February - 2 March 2017.

Summary

Two scanning electron beam lithography (SEBL) patterning processes have been developed, one positive and one negative tone. The processes feature nanometer-scale resolution, chemical amplification for faster throughput, long film life under vacuum, and sufficient etch resistance to enable patterning of a variety of materials with a metal-free (CMOS/MEMS compatible) tool set. These resist processes were developed to address two limitations of conventional SEBL resist processes: (1) low areal throughput and (2) limited compatibility with the traditional microfabrication infrastructure.
READ LESS

Summary

Two scanning electron beam lithography (SEBL) patterning processes have been developed, one positive and one negative tone. The processes feature nanometer-scale resolution, chemical amplification for faster throughput, long film life under vacuum, and sufficient etch resistance to enable patterning of a variety of materials with a metal-free (CMOS/MEMS compatible) tool...

READ MORE

High performance, 3D-printable dielectric nanocomposites for millimeter wave devices

Summary

The creation of millimeter wave, 3D-printable dielectric nanocomposite is demonstrated. Alumina nanoparticles were combined with styrenic block copolymers and solvent to create shear thinning, viscoelastic inks that are printable at room temperature. Particle loadings of up to 41 vol % were achieved. Upon being dried, the highest-performing of these materials has a permittivity of 4.61 and a loss tangent of 0.00298 in the Ka band (26.5-40 GHz), a combination not previously demonstrated for 3D printing. These nanocomposite materials were used to print a simple resonator device with predictable pass-band features.
READ LESS

Summary

The creation of millimeter wave, 3D-printable dielectric nanocomposite is demonstrated. Alumina nanoparticles were combined with styrenic block copolymers and solvent to create shear thinning, viscoelastic inks that are printable at room temperature. Particle loadings of up to 41 vol % were achieved. Upon being dried, the highest-performing of these materials...

READ MORE

Polymer dielectrics for 3D-printed RF devices in the Ka band

Summary

Direct-write printing allows the fabrication of centimeter-wave radio devices. Most polymer dielectric polymer materials become lossy at frequencies above 10 GHz. Presented here is a printable dielectric material with low loss in the K a band (26.5–40 GHz). This process allows the fabrication of resonator filter devices and a radio antenna.
READ LESS

Summary

Direct-write printing allows the fabrication of centimeter-wave radio devices. Most polymer dielectric polymer materials become lossy at frequencies above 10 GHz. Presented here is a printable dielectric material with low loss in the K a band (26.5–40 GHz). This process allows the fabrication of resonator filter devices and a radio...

READ MORE

Switchable electrowetting of droplets on dual-scale structured surfaces

Published in:
J. Vac. Sci. Technol. B, Microelectron. Process. Phenon., Vol. 30, No. 6, November 2012, 06F801.

Summary

The authors report on the development of surfaces containing artificially fabricated structures of dual nanometer and micrometer surfaces that allow an aqueous droplet to be reversibly switched by electrowetting from a Cassie state with low adhesion to a Wenzel state with high adhesion. A variety of geometries were fabricated to study parameters that affect switchable wetting-dewetting. Nanometer parallel corrugations, posts, and holes were fabricated and combined with micrometer features consisting of parallel corrugations, streets, and checkerboard patterns of varying widths and pitches. It was observed that many combinations of the dual-textured surfaces produced superhydrophobic wetting states and aqueous droplets on these surfaces could be electrically controlled to switch from a Cassie state to a Wenzel state. Reversible switching between these wetting states occurred on specific combinations of surface geometries, namely surfaces that had parallel corrugations.
READ LESS

Summary

The authors report on the development of surfaces containing artificially fabricated structures of dual nanometer and micrometer surfaces that allow an aqueous droplet to be reversibly switched by electrowetting from a Cassie state with low adhesion to a Wenzel state with high adhesion. A variety of geometries were fabricated to...

READ MORE

Reversible electrowetting on dual-scale-patterned corrugated microstructured surfaces

Published in:
J. of Microeletromechanical Systems, Vol. 21, No. 5, October 2012, pp. 1261-71.

Summary

The ability to reversibly switch between a hydrophobic Cassie state and a hydrophilic Wenzel state is often not possible on textured surfaces because of energy barriers which result from the geometry of the microstructure. In this paper, we report on a simple microstructure geometry that allows an aqueous droplet to be reversibly switched between these states by the application of electrowetting. We demonstrate reversible electrowetting in air on microstructured surfaces consisting of parallel corrugations and show that this geometry can be engineered to produce a Cassie state and can be electrically controlled to switch to a Wenzel wetting state having high adhesion. When the electric field was removed, we observed spontaneous dewetting along the corrugations as the droplet transitioned from the Wenzel state back to a Cassie state.
READ LESS

Summary

The ability to reversibly switch between a hydrophobic Cassie state and a hydrophilic Wenzel state is often not possible on textured surfaces because of energy barriers which result from the geometry of the microstructure. In this paper, we report on a simple microstructure geometry that allows an aqueous droplet to...

READ MORE

Lithographically directed surface modification

Published in:
J. Vacuum Sci. Technol. B, Microelectron. Process. Phenon., Vol. 27, No. 6, p. 3031-3037.

Summary

The directed assembly of polystyrene-block-poly(methyl methacrylate) films on a variety of photolytically nanopatterned siloxane-modified surfaces was investigated. The amount of siloxane removal is related to the exposure dose of a 157 nm laser. The modified surfaces were imaged using a 157 nm interference exposure system to lithographically define areas of different surface energies to direct the assembly of the diblock copolymer films. The analysis of the surface energy aerial image provided insights into the exposure doses required to result in defect-free films. While the slope of the surface energy aerial image was not found to be important by itself, in concert with the difference in high and low surface energy regions, as well as the maximum value of the low surface energy region, it provided insight into conditions needed to direct self-assembly of the block copolymer films. Preliminary investigations concerning the extension of this methodology to 193 nm showed that the polar surface energy of arylsiloxane-modified surfaces can also be affected by 193 nm exposure.
READ LESS

Summary

The directed assembly of polystyrene-block-poly(methyl methacrylate) films on a variety of photolytically nanopatterned siloxane-modified surfaces was investigated. The amount of siloxane removal is related to the exposure dose of a 157 nm laser. The modified surfaces were imaged using a 157 nm interference exposure system to lithographically define areas of...

READ MORE

Polymer matrix effects on acid generation

Published in:
SPIE Vol. 6923, Advances in Resist Materials and Processing Technology XXV, 24-29 February 2008, 692319.

Summary

We have measured the acid generation efficiency with EUV exposure of a PAG in different polymer matrixes representing the main classes of resist polymers as well as some previously described fluoropolymers for lithographic applications. The polymer matrix was found to have a significant effect on the acid generation efficiency of the PAG studied. A linear relationship exists between the absorbance of the resist and the acid generation efficiency. A second inverse relationship exists between Dill C and aromatic content of the resist polymer. It was shown that polymer sensitization is important for acid generation with EUV exposure and the Dill C parameter can be increased by up to five times with highly absorbing non-aromatic polymers, such as non-aromatic fluoropolymers, over an ESCAP polymer. The increase in the Dill C value will lead to an up to five fold increase in resist sensitivity. It is our expectation that these insights into the nature of polymer matrix effects on acid generation could lead to increased sensitivity for EUV resists.
READ LESS

Summary

We have measured the acid generation efficiency with EUV exposure of a PAG in different polymer matrixes representing the main classes of resist polymers as well as some previously described fluoropolymers for lithographic applications. The polymer matrix was found to have a significant effect on the acid generation efficiency of...

READ MORE

Contribution of photoacid generator to material roughness

Published in:
J. Vac. Sci. Technol. B, Microelectron. Process. Phenon., Vol. 24, No. 6, November/December 2006, pp. 3031-3039 (EIPBN 2006, 30 May-2 June 2006).

Summary

The authors have developed an atomic-force-microscopy-based technique to measure intrinsic material roughness after base development. This method involves performing an interrupted development of the resist film and measuring the resulting film roughness after a certain fixed film loss. Employing this technique, the authors previously established that the photoacid generator (PAG) is a major material contributor of film roughness and that PAG segregation in the resist is likely responsible for nanoscale dissolution inhomogeneities. The additional roughness imparted on a test polymer by incorporation of a series of iodonium, sulfonium, diazo, and imido PAGs was measured. The roughness was then correlated to the inhibition properties of the various PAGs. This was accomplished both through a NMR technique that measures interaction of the PAG with the polymer and by evaluating the dissolution inhibition properties of the PAG through a percolation model. Several PAGs that result in significantly lower material roughness and thus the potential for significantly reduced linewidth roughness in resist imaging have been identified.
READ LESS

Summary

The authors have developed an atomic-force-microscopy-based technique to measure intrinsic material roughness after base development. This method involves performing an interrupted development of the resist film and measuring the resulting film roughness after a certain fixed film loss. Employing this technique, the authors previously established that the photoacid generator (PAG)...

READ MORE

Immersion patterning down to 27 nm half pitch

Published in:
J. Vac. Sci. Technol. B, Microelectron. Process. Phenon., Vol. 24, No. 6, November/December 2006, pp. 2789-2797 (EIPBN 2006, 30 May-2 June 2006).

Summary

Liquid immersion interference lithography at 157 nm has been used to print gratings of 27 nm half pitch with a fluorine-doped fused silica prism having index of 1.66. In order to achieve these dimensions, new immersion fluids have been designed and synthesized. These are partially fluorinated organosiloxanes with indexes up to 1.5. Their absorbance is on the order of 0.4/um (base 10), enabling the use of liquid films with micron-size thickness. To utilize these semiabsorptive fluids, an immersion interference printer has been designed, built, and implemented for handling micron-scale liquid layers.
READ LESS

Summary

Liquid immersion interference lithography at 157 nm has been used to print gratings of 27 nm half pitch with a fluorine-doped fused silica prism having index of 1.66. In order to achieve these dimensions, new immersion fluids have been designed and synthesized. These are partially fluorinated organosiloxanes with indexes up...

READ MORE

Showing Results

1-10 of 11