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A multi-frame, megahertz CCD imager

June 1, 2009
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Journal Article
Author:
Jacob A. Mendez
…
Published in:
IEEE Trans. Nuclear Sci., Vol. 56, No. 3, June 2009, pp. 1188-1192.
Topic:
sensors
R&D area:
R&D group:

Summary

The Los Alamos National Laboratory's Dual Axis Radiographic Hydrodynamic Test Facility (DARHT) generates flash radiographs of explosive experiments using two linear induction electron accelerators situated at right angles. The DARHT second axis accelerator generates an 18-MeV, 2 kA, 2 sec electron beam which is converted or "chopped" into four individual pulses ranging from 20 to 100 nsec in length at 2 MHz frequency. The individual electron beam pulses are down-converted by a segmented lutetium oxyorthosilicate scintillator, creating four visible light flashes, to image explosively driven events. To record these events, a high efficiency, high speed, imager has been fabricated which is capable of framing rates of 2 MHz. This device utilizes a 512 512 pixel charge coupled device (CCD) with a 25 cm2 active area, and incorporates an electronic shutter technology designed for back-illuminated CCD's, making this the largest and fastest back-illuminated CCD in the world. Characterizing an imager capable of this frame rate presents unique challenges. High speed LED drivers and intense radioactive sources are needed to perform basic measurements.We investigate properties normally associated with single-frame CCDs such as read noise, gain, full-well capacity, detective quantum efficiency (DQE), sensitivity, and linearity. In addition, we investigate several properties associated with the imager's multi-frame operation such as transient frame response and frame-to-frame isolation while contrasting our measurement techniques and results with more conventional devices.
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Summary

The Los Alamos National Laboratory's Dual Axis Radiographic Hydrodynamic Test Facility (DARHT) generates flash radiographs of explosive experiments using two linear induction electron accelerators situated at right angles. The DARHT second axis accelerator generates an 18-MeV, 2 kA, 2 sec electron beam which is converted or "chopped" into four individual...

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A multi-frame, megahertz CCD imager

Lincoln Laboratory high-speed solid-state imager technology

September 17, 2006
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Conference Paper
Author:
Robert K. Reich
…
Published in:
SPIE Vol. 6279, 27th Int. Congress on High-Speed Photography and Photonics, 17-22 September 2006, 62791K.
Topic:
optics
R&D area:
R&D group:

Summary

Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames per second with readout noise of less than 10 e- rms. An electronic shutter has been integrated into the pixels of the back-illuminated (BI) CCD imagers that give snapshot exposure times of less than 10 ns. For burst imaging, a 5 cm x 5 cm, 512 x 512-element, multi-frame CCD imager that collects four sequential image frames at megahertz rates has been developed for the Los Alamos National Laboratory Dual Axis Radiographic Hydrodynamic Test (DARHT) facility. To operate at fast frame rates with high sensitivity, the imager uses the same electronic shutter technology as the continuously framing 128 x 128 CCD imager. The design concept and test results are described for the burst-frame-rate imager. Also discussed is an evolving solid-state imager technology that has interesting characteristics for creating large-format x-ray detectors with ultra-short exposure times (100 to 300 ps). The detector will consist of CMOS readouts for high speed sampling (tens of picoseconds transistor switching times) that are bump bonded to deep-depletion silicon photodiodes. A 64 x 64-pixel CMOS test chip has been designed, fabricated and characterized to investigate the feasibility of making large-format detectors with short, simultaneous exposure times.
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Summary

Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames...

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Lincoln Laboratory high-speed solid-state imager technology

Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology

June 19, 2005
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Conference Paper
Author:
Vyshnavi Suntharalingam
…
Published in:
2005 IEEE Int. Solid-Stat Circuits Conf. Digest of Technical Papers, Pt.1, 19-25 June 2005, p. 356-357.
Topic:
integrated circuit
R&D area:
R&D group:

Summary

In this paper a 3D integrated 1024x1024, 8um pixel visible image sensor fabricated with oxide-to-oxide wafer bonding and 2-um square 3-D-vias in every pixel is presented. The 150mm wafer technology integrates a low-leakage, deep-depletion, 100% fill factor photodiode layer to a 3.3-V, 0.35-um gate length fully depleted (FD) SOI CMOS readout circuit layer.
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Summary

In this paper a 3D integrated 1024x1024, 8um pixel visible image sensor fabricated with oxide-to-oxide wafer bonding and 2-um square 3-D-vias in every pixel is presented. The 150mm wafer technology integrates a low-leakage, deep-depletion, 100% fill factor photodiode layer to a 3.3-V, 0.35-um gate length fully depleted (FD) SOI CMOS...

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Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology

Dynamic response of an electronically shuttered CCD imager

June 1, 2004
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Journal Article
Author:
Dennis D. Rathman
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Published in:
IEEE. Trans. Electron Devices, Vol. 51, No. 6, June 2004, pp. 864-869.
Topic:
sensors
R&D area:
R&D group:

Summary

The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter opening, simulations indicate that the collection of photoelectrons occurs in times much shorter than that needed to form the steady-state depletion region under the CCD well. In addition, the shutter closing occurs faster than the reconstitution of the p-buried (shutter) layer. Simulations further indicate that electric fields created in the neutral substrate by the shutter clocks enable photogenerated charge collection/rejection on nanosecond time scales despite the fact that the depletion-region formation and collapse take much longer times.
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Summary

The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter opening, simulations indicate that the collection of photoelectrons occurs in times much shorter than that...

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Dynamic response of an electronically shuttered CCD imager

High-fill-factor, burst-frame-rate charge-coupled device

August 3, 2003
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Conference Paper
Author:
Robert K. Reich
…
Published in:
SPIE Vol. 5210, Ultrahigh- and High-Speed Photography, Photonics, and Videography, 3-8 August 2003, pp. 95-104.
Topic:
electronics
R&D area:
R&D group:

Summary

A 512x512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. Device-level simulations were done to estimate the CCD collection well spaces for sub-microsecond photoelectron collection times. Also required for the high frame rates were process enhancements that included metal strapping of the polysilicon gate electrodes and a second metal layer. Tests on finished back-illuminated CCD imagers have demonstrated sequential multi-frame capture capability with integration intervals in the hundreds of nanoseconds range.
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Summary

A 512x512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. Device-level simulations were done to estimate the CCD collection well spaces for...

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High-fill-factor, burst-frame-rate charge-coupled device

High-speed, electronically shuttered solid-state imager technology

July 8, 2002
  |
Conference Paper
Author:
Robert K. Reich
…
Published in:
Rev. Sci. Instrum. Vol. 74, No. 3, Pt. II, March 2003, pp. 2027-2031 (Proceedings of the 14th Topical Conference on High-Temperature Plasma Diagnostics, 8-11 July 2002)
Topic:
electronics
R&D area:
R&D group:

Summary

Electronically shuttered solid-state imagers are being developed for high-speed imaging applications. A 5 cmx5 cm, 512x512-element, multiframe charge-coupled device (CCD) imager has been fabricated for the Los Alamos National Laboratory DARHT facility that collects four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology designed for back-illuminated CCDs. The design concept and test results are described for the burst-frame-rate imager. Also discussed is an evolving solid-state imager technology that has interesting characteristics for creating large-format x-ray detectors with short integration times (100 ps to 1 ns). Proposed device architectures use CMOS technology for high speed sampling (tens of picoseconds transistor switching times). Techniques for parallel clock distribution, that triggers the sampling of x-ray photoelectrons, will be described that exploit features of CMOS technology.
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Summary

Electronically shuttered solid-state imagers are being developed for high-speed imaging applications. A 5 cmx5 cm, 512x512-element, multiframe charge-coupled device (CCD) imager has been fabricated for the Los Alamos National Laboratory DARHT facility that collects four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity...

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High-speed, electronically shuttered solid-state imager technology
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