Publications
Multilayer microhydraulic actuators with speed and force configurations
Summary
Summary
Electrostatic motors have traditionally required high voltage and provided low torque, leaving them with a vanishingly small portion of the motor application space. The lack of robust electrostatic motors is of particular concern in microsystems because inductive motors do not scale well to small dimensions. Often, microsystem designers have to...
Linear and rotational microhydraulic actuators driven by electrowetting
Summary
Summary
Microhydraulic actuators offer a new way to convert electrical power to mechanical power on a microscale with an unmatched combination of power density and efficiency. Actuators work by combining surface tension force contributions from a large number of droplets distorted by electrowetting electrodes. This paper reports on the behavior of...
Re-engineering Artificial Muscle with Microhydraulics
Summary
fraction of their length. The 100 μm pitch MSA presented here already has an output power density of over 200 W kg− 1, rivaling the most powerful biological muscles, due to the scaling of surface tension forces, MSA’s power density grows quadratically as its dimensions are reduced.
Summary
We introduce a new type of actuator, the microhydraulic stepping actuator (MSA), which borrows design and operational concepts from biological muscle and stepper motors. MSAs offer a unique combination of power, efficiency, and scalability not easily achievable on the microscale. The actuator works by integrating surface tension forces produced by...
Microhydraulic electrowetting actuators
Summary
Summary
The conversion of electrical to mechanical power on a sub-centimeter scale is a key technology in many microsystems and energy harvesting devices. In this paper, we present a type of a capacitive energy conversion device that uses capillary pressure and electrowetting to reversibly convert electrical power to hydraulic power. These...
FDSOI process technology for subthreshold-operation ultra-low power electronics
Summary
Summary
Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation...
Work-function-tuned TiN metal gate FDSOI transistors for subthreshold operation
Summary
Summary
The effective work function of a reactively sputtered TiN metal gate is shown to be tunable from 4.30 to 4.65 eV. The effective work function decreases with nitrogen flow during reactive sputter deposition. Nitrogen annealing increases the effective work function and reduces Dit. Thinner TiN improves the variation in effective...
Improvement of SOI MOSFET RF performance by implant optimization
Summary
Summary
The characteristics of silicon on insulator MOSFETs are modified to enhance the RF performance by varying channel implants. Without adding new masks or fabrication steps to the standard CMOS process, this approach can be easily applied in standard foundry fabrication. The transconductance, output resistance, and breakdown voltage can be increased...
FDSOI process technology for subthreshold-operation ultralow-power electronics
Summary
Summary
Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation...
Channel engineering of SOI MOSFETs for RF applications
Summary
Summary
Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has...
High density plasma etching of titanium nitride metal gate electrodes for fully depleted silicon-on-insulator subthreshold transistor integration
Summary
Summary
Etching of TiN metal gate materials as a part of an integrated flow to fabricate fully depleted silicon-on-insulator ultralow-power transistors is reported. TiN etching is characterized as a function of source power, bias power, gas composition, and substrate temperature in a high density inductively coupled plasma reactor. Under the conditions...