Publications
Spectral beam combining of a broad-stripe diode laser array in an external cavity
March 15, 2000
Journal Article
Published in:
Opt. Lett., Vol. 25, No. 6, 15 March 2000, pp. 405-407.
Summary
The outputs from an 11-element, linear diode laser array with broad stripes have been beam combined into a single beam with a beam quality of ~20X diffraction limited in the plane of the junction. This beam combining was achieved by use of a common external cavity containing a grating, which simultaneously forces each array element to operate at a different, but controlled, wavelength and forces the beams from all the elements to overlap and propagate in the same direction. The power in the combined beam was 50% of the output from the bare laser array.
Summary
The outputs from an 11-element, linear diode laser array with broad stripes have been beam combined into a single beam with a beam quality of ~20X diffraction limited in the plane of the junction. This beam combining was achieved by use of a common external cavity containing a grating, which...
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1.5-um Tapered-Gain-Region Lasers with High-CW Output Powers
October 1, 1998
Journal Article
Published in:
IEEE Photonics Technol. Lett., Vol. 10, No. 10, October 1998, pp. 1377-1379.
Summary
High-power diode lasers consisting of a ridge-waveguide section coupled to a tapered region have been fabricated in 1.5um InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high-intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers>1 W with=80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters.
Summary
High-power diode lasers consisting of a ridge-waveguide section coupled to a tapered region have been fabricated in 1.5um InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high-intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To...
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