We have developed a merged CCD/SOI-CMOS technology that enables the fabrication of monolithic, low-power imaging systems on a chip. The CCD's, fabricated in the bulk handle wafer, have charge-transfer inefficiencies of about 1x10(-5) and well capacities of more than 100,000 electrons with 3.3-V clocks and 8x8um pixels. Fully depleted 0.35pm SOI-CMOS ring oscillators have stage delay of 48ps at 3.3V. We demonstrate for the first time an integrated image sensor with charge-domain A/D conversion and on-chip clocking.