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Broadband (200-1000 nm) back-illuminated ccd imagers

June 16, 2002
  |
Conference Paper
Author:
Barry E. Burke
…
Published in:
Scientific Detectors Workshop 2002, 16-22 June 2002.p. 41-50.
Topic:
optics
R&D area:
R&D group:

Summary

Improved and stable blue/UV quantum efficiency has been demonstrated on 2Kx4K imagers using molecular-beam epitaxy to create a thin doped layer on the back surface. Quantum efficiency data on thick (40-50 pm) imagers with single and dual-layer anti-reflection coatings is presented that demonstrates high and broadband response. Measurements of the optical point-spread response show the devices to be fully depleted with good response across a broad spectrum, but interesting features appear in the near-IR as a result of deeply penetrating light being scattered off the surface structure of the CCD.
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Summary

Improved and stable blue/UV quantum efficiency has been demonstrated on 2Kx4K imagers using molecular-beam epitaxy to create a thin doped layer on the back surface. Quantum efficiency data on thick (40-50 pm) imagers with single and dual-layer anti-reflection coatings is presented that demonstrates high and broadband response. Measurements of the...

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Broadband (200-1000 nm) back-illuminated ccd imagers

Demonstration of a 630-GHz photomixer used as a local oscillator

June 13, 1999
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Conference Paper
Author:
Erik K. Duerr
…
Published in:
1999 IEEE MTT-S Int. Microwave Symp. Digest, Vol. 1, 13-19 June 1999, pp. 127-130.
Topic:
lasers
R&D area:
R&D group:

Summary

We report the first successful demonstration of a photomixer local oscillator (LO) integrated with a superconducting heterodyne detector. The photomixer LO generated the difference frequency of two diode lasers by optical heterodyne conversion in low-temperature-grown GaAs. The measured receiver noise temperature, 331 K at 630 GHz, compares favorably with that achieved using a varactor-multiplier LO. We also report the design of a high-power distributed photomixer structure.
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Summary

We report the first successful demonstration of a photomixer local oscillator (LO) integrated with a superconducting heterodyne detector. The photomixer LO generated the difference frequency of two diode lasers by optical heterodyne conversion in low-temperature-grown GaAs. The measured receiver noise temperature, 331 K at 630 GHz, compares favorably with that...

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Demonstration of a 630-GHz photomixer used as a local oscillator

A photomixer local oscillator for a 630-GHz heterodyne receiver

June 1, 1999
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Journal Article
Author:
Simon Verghese
…
Published in:
IEEE Microw. Guid. Wave Lett., Vol. 9, No. 6, June 1999, pp. 245-7.
Topic:
microelectronics
R&D area:
R&D group:

Summary

A photomixer local oscillator (LO) operating at the 630-GHz difference frequency of two laser diodes was successfully demonstrated with a heterodyne detector based on a niobium superconducting tunnel junction. The low-temperature-grown GaAs photomixer generated 0.20 uW in the input spatial mode of the receiver. Using the photmixer LO, the double-sideband noise temperature of the receiver was 331 K - in good agreement with the 323-K noise temperature obtained when a multiplied Gunn oscillator generating 0.25 uW was substituted for the photomixer.
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Summary

A photomixer local oscillator (LO) operating at the 630-GHz difference frequency of two laser diodes was successfully demonstrated with a heterodyne detector based on a niobium superconducting tunnel junction. The low-temperature-grown GaAs photomixer generated 0.20 uW in the input spatial mode of the receiver. Using the photmixer LO, the double-sideband...

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A photomixer local oscillator for a 630-GHz heterodyne receiver
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