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Aircraft laser strike geolocation system

June 5, 2017
  |
Conference Paper
Author:
Erin M. Tomlinson
…
Published in:
17th AIAA Aviation Technology, Integration, and Operations Conf., 5-9 June 2017.
Topic:
detection systems
R&D area:
R&D group:

Summary

Laser strikes against aircraft are increasing at an alarming rate, driven by the availability of cheap powerful lasers and a lack of deterrence due to the challenges of locating and apprehending perpetrators. Although window coatings and pilot goggles effectively block laser light, uptake has been low due to high cost and pilot reluctance. This paper describes the development and testing of a proof-of-concept ground based sensor system to rapidly geolocate the origin of a laser beam in a protected region of airspace and disseminate this information to law enforcement to allow a timely and targeted response. Geolocation estimates with accuracies of better than 20 m have been demonstrated within 30 seconds of an event at a range of 8.9 nmi with a 450 mW laser. Recommendations for an operational prototype at an airport are also described.
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Summary

Laser strikes against aircraft are increasing at an alarming rate, driven by the availability of cheap powerful lasers and a lack of deterrence due to the challenges of locating and apprehending perpetrators. Although window coatings and pilot goggles effectively block laser light, uptake has been low due to high cost...

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Aircraft laser strike geolocation system

MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response

April 25, 2011
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Conference Paper
Author:
Daniel R. Schuette
…
Published in:
SPIE Vol. 8033, Advanced Photon Counting Techniques V, 25 April 2011, 80330D.
Topic:
sensors
R&D area:
R&D group:

Summary

We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin (< 10 um) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes it possible to build low-dark-count-rate single-photon detectors with high quantum efficiency extending to deep ultraviolet wavelengths. This paper reviews our process for fabricating MBE back-illuminated silicon Geigermode avalanche photodiode arrays and presents characterization of initial test devices.
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Summary

We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin ( 10 um) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes...

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MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response

Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays

April 5, 2010
  |
Conference Paper
Author:
Daniel R. Schuette
…
Published in:
SPIE Vol. 7681, Advanced Photon Counting Techniques IV, 5 April 2010, 76810P.
Topic:
photonics
R&D area:
R&D group:

Summary

We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to a transparent support substrate followed by indium bump bonding of this layer to a signal-processing ROIC. This hybrid detector approach can be used to fabricate imagers with high-fill-factor pixels and enhanced quantum efficiency in the near infrared as well as large-pixel-count, small-pixel-pitch arrays with pixel-level signal processing. In addition, the oxide bonding is compatible with high-temperature processing steps that can be used to lower dark current and improve optical response in the ultraviolet.
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Summary

We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to...

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Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays
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